Study of the formation of silicon nanoclusters in silicon dioxide during electron beam irradiation-Reference-Cited by-同舟云学术

Study of the formation of silicon nanoclusters in silicon dioxide during electron beam irradiation

Published:2011-07 Issue:7 Volume:53 Page:1474-1480
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Zamoryanskaya M. V.,Ivanova E. V.,Sitnikova A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783411070353.pdf

Reference14 articles.

1. L. A. Bakaleinikov, M. V. Zamoryanskaya, E. V. Kolesnikova, V. I. Sokolova, and E. Yu. Flegontova, Fiz. Tverd. Tela (St. Petersburg) 46(6), 989 (2004) [Phys. Solid State 46 (6), 1018 (2004)].

2. L. N. Skuja and A. R. Silin, Phys. Status Solidi A 70, 43 (1982).

3. A. R. Silin’ and A. N. Trukhin, Point Defects and Elementary Excitations in Crystalline and Vitreous SiO 2 (Zinatne, Riga, 1985) [in Russian].

4. L. N. Skuja, A. N. Streletsky, and A. B. Pakovich, Solid State Commun. 50(12), 2374 (1984).

5. G. Allan, C. Delerue, and M. Lannoo, Phys. Rev. Lett. 78(16), 3161 (1997).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser formation of nano-Si structures in glasses;Journal of Physics: Conference Series;2019-12-01

2. STUDY OF THE EFFECT OF THE BUFFER LAYER ON THE SUBSTRATE SURFACE AND THE PROCESS MEDIUM ON NANOCLUSTER FORMATION IN THE Si1 – xGex STRUCTURE;Nanotechnologies in Russia;2019-11

3. High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide;Journal of Electronic Materials;2018-04-10

4. Transformation of point defects in silicon dioxide during annealing;Physics of the Solid State;2016-10

5. Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen;Semiconductors;2016-06