Scanning tunneling microscopy study of the growth and self-organization of Ge nanostructures on vicinal Si(111) surfaces-Reference-Cited by-同舟云学术

Scanning tunneling microscopy study of the growth and self-organization of Ge nanostructures on vicinal Si(111) surfaces

Published:2006-09 Issue:9 Volume:48 Page:1820-1826
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Romanyuk K. N.,Teys S. A.,Olshanetsky B. Z.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783406090344.pdf

Reference22 articles.

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5. Zhenyang Zhong, A. Halolovic, M. Mühlberger, F. Schäffler, and G. Bauer, J. Appl. Phys. 93, 6258 (2003).

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1. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism;Advances in Semiconductor Nanostructures;2017

2. Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study;Applied Surface Science;2017-01

3. Types of surface modulation in a Ge–Si(111) heterosystem;Bulletin of the Russian Academy of Sciences: Physics;2016-06

4. Structure of initial Ge nanoclusters at the edges of Si(1 1 1) steps with the front in the 〈−1 −1 2〉 direction;Journal of Crystal Growth;2014-10

5. Features of atomic processes at the formation of a wetting layer and nucleation of three-dimensional Ge islands on Si(111) and Si(100) surfaces;JETP Letters;2013-02