Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure-Reference-Cited by-同舟云学术

Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

Published:2013-08 Issue:8 Volume:55 Page:1635-1646
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Mirsagatov Sh. A.,Leiderman A. Yu.,Ataboev O. K.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783413080192.pdf

Reference29 articles.

1. Sh. A. Mirsagatov, B. U. Aitbaev, and V. M. Rubinov, Semiconductors 30(3), 301 (1996).

2. A. N. Zaidel’, Fundamentals of Spectral Analysis (Nauka, Moscow, 1965) [in Russian].

3. N. V. Parol’ and S. A. Kaidalov, Photosensitive Devices and Their Application (Radio i Svyaz’, Moscow, 1991) [in Russian].

4. Sh. A. Mirsagatov, A. S. Achilov, B. N. Zaveryukhin, and M. S. Baiev, Russ. Phys. J. 55(2), 180 (2012).

5. Sh. A. Mirsagatov, O. K. Ataboev, and K. A. Ismoilov, in Proceedings 4th International Scientific and Practical Conference “Structural Relaxation in Solids,” Vinnitsa, Ukraine, May 29–31, 2012, p. 236.

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