Isotope-induced generation of paramagnetic defects under plastic deformation of 29Si crystals-Reference-Cited by-同舟云学术

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Isotope-induced generation of paramagnetic defects under plastic deformation of 29Si crystals

Published:2015-01 Issue:1 Volume:57 Page:100-105
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Koplak O. V.,Dmitriev A. I.,Morgunov R. B.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783415010163.pdf

Reference17 articles.

1. N. T. Bagraev, A. I. Gusarov, and V. A. Mashkov, Sov. Phys. JETP 65(3), 548 (1987).

2. A. Goltzené, Rev. Phys. Appl. 22, 469 (1987).

3. V. A. Grazhulis and Yu. A. Osip’yan, Sov. Phys. JETP 33, 623 (1971).

4. M. Brohl, C. Kisielowski-Kemmerich, and H. Alexander, Appl. Phys. Lett. 50, 1733 (1987).

5. E. R. Weber and H. Alexander, J. Phys., Colloq. 44, C4–319 (1983).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distribution of 28Si, 29Si, and 30Si isotopes under plastic deformation in subsurface layers of Si: B crystals;Physics of the Solid State;2016-02

2. Distribution of 28Si, 29Si and 30Si isotopes in subsurface layers of Si:B single crystals under plastic deformation;Chemical Physics Letters;2016-01

3. Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon 29Si:B;Semiconductors;2015-09

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