Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide-Reference-Cited by-同舟云学术

Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide

Published:2017-04 Issue:4 Volume:59 Page:773-779
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Egorov V. K.,Egorov E. V.,Kukushkin S. A.,Osipov A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783417040072.pdf

Reference14 articles.

1. L. C. Feldman, J. W. Mayer, and S. T. Picraux, Material Analysis by Ion Channeling (Academic, New York, 1982).

2. E. T. Shipatov, Ion Channeling (Rostov State Univ., Rostov-on-Don, 1986) [in Russian].

3. High-Energy Ion Beam Analysis of Solids, Ed. by G. Gotz and K. Gartner (Academic, Berlin, 1988).

4. V. K. Egorov, E. V. Egorov, and Yu. M. Mironov, in Proceedings of the 20th International Scientific and Technical Conference “High Technologies in Russian Industry” (Bauman Moscow State Technical University, Moscow, 2015), p. 178.

5. V. K. Egorov, E. V. Egorov, and M. S. Afanas’ev, Nanoinzheneriya, No. 11, 38 (2012).

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