Deposition of heteroepitaxial layers of topological insulator Bi2Se3 in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2O3 and (100) GaAs substrates-Reference-Cited by-同舟云学术

Deposition of heteroepitaxial layers of topological insulator Bi2Se3 in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2O3 and (100) GaAs substrates

Published:2016-02 Issue:2 Volume:61 Page:183-189
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Kuznetsov P. I.,Luzanov V. A.,Yakusheva G. G.,Temiryazev A. G.,Shchamkhalova B. S.,Zhitov V. A.,Zakharov L. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1064226916010083.pdf

Reference16 articles.

1. L. Fu, C. L. Kane, and E. J. Mele, Phys. Rev. Lett. 98, 106803 (2007).

2. M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).

3. G. S. Jenkins and D. C. Schmadel, Phys. Rev. B 87, 155126 (2013).

4. L. He, F. Xiu, X. Yu, et al., Nano Lett. 12, 1486 (2012).

5. W. H. Jiao, S. Jiang, C. M. Feng, et al., AIP Advances 2, 022148 (2012).

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