320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer-Reference-Cited by-同舟云学术

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320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer

Published:2016-03 Issue:3 Volume:61 Page:348-351
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Iakovleva N. I.,Boltar K. O.,Sedneva M. V.,Lopukhin A. A.,Korotaev E. D.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1064226916030219.pdf

Reference11 articles.

1. A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Current State and Main Directions of Development of Modern Photoelectronics (Fizmatkniga, Moscow, 2010) [in Russian].

2. A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Solid-State Photoelectronics. Photodiodes (Fizmatkniga, Moscow, 2011) [in Russian].

3. I. D. Burlakov, L. Ya. Grinchenko, A. I. Dirochka, et al., Usp. Prikl. Fiz. 2, 131 (2014).

4. M. D. Enriquez, M. A. Blessinger, J. V. Groppe, et al., Proc. SPIE 6940, 21 (2008).

5. J. Campbell, S. Demiguel, F. Ma, et al., IEEE J. Sel. Top. Quantum Electron. 10, 777 (2004).

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