Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCd x Te (x = 0.22–0.23) with the Al2O3 Insulator-Reference-Cited by-同舟云学术

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Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCd x Te (x = 0.22–0.23) with the Al2O3 Insulator

Published:2018-03 Issue:3 Volume:63 Page:281-284
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Voitsekhovskii A. V.,Nesmelov S. N.,Dzyadukh S. M.,Vasil’ev V. V.,Varavin V. S.,Dvoretsky S. A.,Mikhailov N. N.,Yakushev M. V.,Sidorov G. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106422691803021X.pdf

Reference20 articles.

1. A. Rogalski, Infrared Detectors (CRC Press, Taylor & Francis Group, New York, 2011).

2. P. Capper and J. Garland, Mercury Cadmium Telluride: Growth, Properties and Applications (Wiley, Chichester, 2011).

3. V. N. Ovsyuk, G. L. Kuryshev, and Yu. G. Sidorov, Focal Plane Arrays of Infrared Range (Nauka, Novosibirsk, 2001) [in Russian].

4. Yu. G. Sidorov, S. A. Dvoretski, V. S. Varavin, N. N. Mikhalov, M. V. Yakushev, and I. V. Sabinina, Semiconductors 35, 1045 (2001).

5. O. P. Agnihorti, C. A. Musca, and L. Faraone, Semicond. Sci. Tech. 13, 839 (1998).

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