Radiation Sensors Based on Field-Effect and Unijunction Transistors-Reference-Cited by-同舟云学术

Radiation Sensors Based on Field-Effect and Unijunction Transistors

Published:2018-04 Issue:4 Volume:63 Page:399-402
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Vikulin I. M.,Verem’eva A. V.,Gorbachev V. E.,Markolenko P. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1064226918040137.pdf

Reference10 articles.

1. I. M. Vikulin, Sh. D. Kurmashev, L. F. Vikulina, and V. I. Stafeev, J. Commun. Technol. Electron. 59, 275 (2014).

2. V. L. Perevertailo, Tekhnol. Konstruir. Elektron. Apparat., No. 5-6, 22 (2010).

3. V. V. Andreev, A. A. Stolyarov, M. S. Vasyutkin, and A. M. Mikhalkov, Vestn. MGTU im. N. E. Baumana, Ser. Priborostroenie, No. SV, 118 (2010).

4. I. M. Vikulin and V. I. Stafeev, in Physics of Semiconductors (Radio i Svyaz’, Moscow, 1990) [in Russian].

5. V. M. Kulakov, L. E. Ladygin, V. I. Shakhovtsov, et al., Action of Penetrating Radiation on Electronic Devices, Ed. by E. A. Ladygin (Sovetskoe Radio, Moscow, 1980) [in Russian].

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