Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures-Reference-Cited by-同舟云学术

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Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

Published:2016-03 Issue:3 Volume:61 Page:319-323
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Iakovleva N. I.,Boltar K. O.,Sednev M. V.,Patrashin A. I.,Irodov N. A.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1064226916030207.pdf

Reference15 articles.

1. A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Solid-State Photoelectronics. Photodiodes (Fizmatkniga, Moscow, 2011) [in Russian].

2. A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Current State and Main Directions of Development of Modern Photoelectronics (Fizmatkniga, Moscow, 2010) [in Russian].

3. F. Guellec, M. Tchagaspanian, P. Ballet, et al., Proc. SPIE 6940, 69402 (2008).

4. R. Heinrichs, B. F. Aull, R. M. Marino, et al., Proc. SPIE 4377, 106 (2001).

5. M. A. Itzler, M. Entwistle, M. Owens, et al., Proc. SPIE 7780, 77801 (2010).

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