Separation of dynamic current-voltage characteristics (DCVCs) of an oxide film from the DCVC of ionic currents in a metal/oxide/semiconductor structure: Universal quasi-static DCVCs of a film-Reference-Cited by-同舟云学术

Separation of dynamic current-voltage characteristics (DCVCs) of an oxide film from the DCVC of ionic currents in a metal/oxide/semiconductor structure: Universal quasi-static DCVCs of a film

Published:2006-02 Issue:2 Volume:51 Page:123-140
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Dmitriev S. G.,Markin Yu. V.,Sizov V. E.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106422690602001X.pdf

Reference35 articles.

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3. E. R. Nicollian and J. R. Brews, MOS (Metal-Oxide-Semiconductor) Physics and Technology (Wiley, New York, 1982).

4. W. Hillen and J. F. Verwey, in Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities, Ed. by G. Barbottin and A. Vapaille (Elsevier, Amsterdam, 1986) pp. 403–409.

5. D. J. DiMaria, J. Appl. Phys. 48, 1549 (1977).

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