NMR line shift of gallium in GaAs crystals in the temperature range 160

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NMR line shift of gallium in GaAs crystals in the temperature range 160–360 K

Published:1998-08 Issue:8 Volume:40 Page:1288-1289
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Hoffmann W. D.,Michel D.,Sorina I. G.,Charnaya E. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1130545.pdf

Reference14 articles.

1. H. Lütgemeier, Z. Naturforsch. 19a, 1297 (1964).

2. V. L. Bogdanov and V. V. Lemanov, Fiz. Tverd. Tela (Leningrad) 10, 286 (1968) [Sov. Phys. Solid State 10, 223 (1968)].

3. D. G. Andrianov, Yu. B. Muravlev, N. N. Solov’ev, and V. I. Fistul’, Fiz. Tekh. Poluprovodn. 8, 604 (1974) [Sov. Phys. Semicond. 8, 386 (1974)].

4. V. F. Masterov, V. P. Maslov, and G. N. Talalakin, Fiz. Tekh. Poluprovodn. 11, 1421 (1977) [Sov. Phys. Semicond. 11, 837 (1977)].

5. Oc Hee Han, H. K. C. Timken, and E. Oldfield, J. Chem. Phys. 89, 6046 (1988).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. β-detected NMR Study of Semi-Insulating GaAs;Physics Procedia;2012

2. The Knight shift in liquid gallium confined within porous glasses and opals;Journal of Physics: Condensed Matter;2003-08-01

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