Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures

Author:

Pudalov V. M.,Brunthaler G.,Prinz A.,Bauer G.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Reference17 articles.

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4. S. V. Kravchenko et al., Phys. Rev. B 50, 8039 (1994). S. V. Kravchenko et al., Phys. Rev. B 51, 7038 (1995).

5. S. Das Sarma and E. H. Hwang, http://xxx.lanl.gov/abs/cond-mat/9812216 http://xxx.lanl.gov/abs/cond-mat/9901117.

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