Formation and study of buried SiC layers with a high content of radiation defects-Reference-Cited by-同舟云学术

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Formation and study of buried SiC layers with a high content of radiation defects

Published:2004-10 Issue:10 Volume:38 Page:1176-1178
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bogdanova E. V.,Kozlovski V. V.,Rumyantsev D. S.,Volkova A. A.,Lebedev A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1808824.pdf

Reference9 articles.

1. V. V. Kozlovskii, Modification of Semiconductors by Proton Beams (Nauka, St. Petersburg, 2003) [in Russian].

2. V. A. Kozlov, V. V. Kozlovskii, A. N. Titkov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1310 (2002) [Semiconductors 36, 1227 (2002)].

3. A. A. Lebedev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 129 (1999) [Semiconductors 33, 107 (1999)].

4. Y. Koshka and M. Mazzola, Appl. Phys. Lett. 79, 752 (2001).

5. Y. Koshka and M. Mazzola, Mater. Sci. Forum 389–393, 609 (2002).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radioluminescence characterization of SiC and SiC/SiC for 1.8MeV electron irradiation;Journal of Nuclear Materials;2013-11

2. Radioluminescence characterization of hot pressed, reaction bonded, and CVD SiC;IOP Conference Series: Materials Science and Engineering;2010-11-01

3. The effect of irradiation on the properties of SiC and devices based on this compound;Semiconductors;2007-07

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