Silicon two-emitter differential tensotransistor with an accelerating electric field in the base-Reference-Cited by-同舟云学术

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Silicon two-emitter differential tensotransistor with an accelerating electric field in the base

Published:1999-10 Issue:10 Volume:44 Page:1186-1190
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Babichev G. G.,Kozlovskii S. I.,Romanov V. A.,Sharan N. N.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1259492.pdf

Reference7 articles.

1. G. G. Babichev, V. N. Guz’, I. P. Zhad’ko et al., Fiz. Tekh. Poluprovodn. 26, 1244 (1992) [Sov. Phys. Semicond. 26, 694 (1992)].

2. S. I. Kozlovskii, Fiz. Tekh. Poluprovodn. 29, 1244 (1995) [Semiconductors 29, 930 (1995)].

3. G. G. Babichev, V. N. Guz’, I. P. Zhad’ko et al., Fiz. Tekh. Poluprovodn. 26, 1723 (1992) [Sov. Phys. Semicond. 26, 964 (1992)].

4. I. I. Boiko and V. A. Romanov, Fiz. Tekh. Poluprovodn. 11, 817 (1977) [Sov. Phys. Semicond. 11, 481 (1977)].

5. H. P. Baltes and R. S. Popovic, Proc. IEEE 74, 1107 (1986).

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