Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures-Reference-Cited by-同舟云学术

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Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures

Published:1999-03 Issue:3 Volume:41 Page:484-488
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Gusev O. B.,Ber B. Ya.,Bresler M. S.,Zakharchenya B. P.,Yassievich I. N.,Khitrova G.,Gibbs H. M.,Prineas D. P.,Lindmark E. K.,Masterov V. F.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1130808.pdf

Reference11 articles.

1. Rare-Earth Doped Semiconductors, edited by G. S. Pomrenke, P. B. Klein, and D. W. Langer (Materials Research Society, Pittsburgh, 1993).

2. Rare-Earth Doped Semiconductors II, edited by S. Coffa, A. Polman, and R. N. Schwartz (Materials Research Society, Pittsburgh, 1996).

3. C. Kittel, Introduction to Solid-State Physics (Wiley, New York, 1956; Nauka, Moscow, 1978), Table 3.1.

4. J. E. Colon, D. W. Elsaesser, Y. K. Yeo, R. L. Hengehold, and G. S. Pomrenke, Rare-Earth Doped Semiconductors, edited by G. S. Pomrenke, P. B. Klein, and D. W. Langer (Materials Research Society, Pittsburgh, 1993)in Ref. 1, p. 251.

5. T. Zhang, J. Sun, N. V. Edwards, D. E. Moxey, R. M. Kolbas, and P. J. Caldwell, Rare-Earth Doped Semiconductors, edited by G. S. Pomrenke, P. B. Klein, and D. W. Langer (Materials Research Society, Pittsburgh, 1993)in Ref. 1, p. 257.

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