Charge-carrier lifetime in Hg1−x CdxTe (x=0.22) structures grown by molecular-beam epitaxy-Reference-Cited by-同舟云学术

Charge-carrier lifetime in Hg1−x CdxTe (x=0.22) structures grown by molecular-beam epitaxy

Published:1997-07 Issue:7 Volume:31 Page:655-657
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Voitsekhovskii A. V.,Denisov Yu. A.,Kokhanenko A. P.,Varavin V. S.,Dvoretskii S. A.,Liberman V. T.,Mikhailov N. N.,Sidorov Yu. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187058.pdf

Reference12 articles.

1. A. V. Voitskhovskii and V. N. Davydov, Photoelectric MIS Structures Based on Narrow-Gap Semiconductors [in Russian], Radio i svyaz’, Tomsk, 1990, p. 382.

2. V. A. Kemarskii and N. A. Kul’chitskii, in Review Information [in Russian], No. 5207, Part 2, p. 3 (1990).

3. A. V. Voitsekhovskii, I. I. Izhnin, N. A. Kul’chitskii, and V. A. Kemarskii, in Electronics Abroad [in Russian], Central Scientific-Research Institute “Élektronika,” Moscow, 1992, No. 12, p. 3.

4. V. C. Lopes, A. G. Syllaics, and N. C. Chen, Semicond. Sci. Technol. 8, 824 (1993).

5. M. E. de Souza, M. Boukerche, and J. P. Faurie, J. Appl. Phys. 68, 5195 (1990).

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