Photoluminescence of anodized silicon carbide-Reference-Cited by-同舟云学术

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Photoluminescence of anodized silicon carbide

Published:1997-02 Issue:2 Volume:31 Page:202-203
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Agekyan V. F.,Stepanov Yu. A.,Lebedev A. A.,Lebedev A. A.,Rud’ Yu. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187109.pdf

Reference16 articles.

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

2. J. C. Vial, A. Baisey, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Rotestain, and R. M. MacFarlane, Phys. Rev. B 45, 14171 (1992).

3. M. Voos, Ph. Uzan, C. Delalande, G. Bastard, and A. Halimaoui, Appl. Phys. Lett. 61, 1213 (1992).

4. R. P. Vasques, R. W. Fathauer, T. George, A. Ksendzov, and T. L. Lin, Appl. Phys. Lett. 60, 1004 (1992).

5. M. S. Brand, H. D. Fuchs, M. Stuzmann, J. Weber, and M. Cardona, Solid State Commun. 81, 307 (1992).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum;Physics of the Solid State;2011-09

2. The features of photoluminescence from nanograins of gallium-doped cubic silicon carbide;Technical Physics Letters;2002-09

3. Photoluminescence and degradation properties of carbonized porous silicon;Technical Physics Letters;1998-08

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