The Kinetics of Growth of a Nanosized Germanium Film Deposited on the Si(001) Surface by Magnetron Sputtering
-
Published:2019-09
Issue:5
Volume:10
Page:1058-1064
-
ISSN:2075-1133
-
Container-title:Inorganic Materials: Applied Research
-
language:en
-
Short-container-title:Inorg. Mater. Appl. Res.
Author:
Monakhov I. S.,Bondarenko G. G.
Publisher
Pleiades Publishing Ltd
Subject
General Engineering,General Materials Science
Reference15 articles.
1. Samavati, A., Mustafa, M.K., Othaman, Z., and Ghoshal, S.K., Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties, J. Nanomater., 2015, vol. 2015, art. ID 681242. 2. Steglich, M., Patzig, C., Berthold, L., Schrempel, F., Füchse, K., Höche, T., Kley, E.-B., and Tünnermann, A., Heteroepitaxial Ge–on–Si by DC magnetron sputtering, AIP Adv., 2013, vol. 3, art. ID 072108. 3. Burbaev, T.M., Kurbatov, V.A., Pogosov, A.O., Rzaev, M.M., and Sibel’din, N.N., Photoluminescence from germanium quantum wells and quantum dots in silicon grown by MBE at low temperature, Semiconductors, 2003, vol. 37, no. 2, pp. 207–209. 4. Sorianello, V., Colace, L., Armani, N., Rossi, F., Ferrari, C., Lazzarini, L., and Assanto, G., Low-temperature germanium thin films on silicon, Opt. Mater. Express, 2011, vol. 1, no. 5, pp. 856–865. 5. Vostokov, N.V., Krasil’nik, Z.F., Lobanov, D.N., Novikov, A.V., Postnikov, V.V., and Filatov, D.O., Atomic-force microscopy of the growth of self-assembled Ge nanoislands on Si (001), Poverkhn.: Rentgenovskie, Sinkhrotronnye Neitr. Issled., 2000, no. 7, pp. 12–16.
|
|