Peculiarities of Estimating the Optical Band Gap of Thin Films of Phase Change Memory Materials-Reference-Cited by-同舟云学术

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Peculiarities of Estimating the Optical Band Gap of Thin Films of Phase Change Memory Materials

Published:2020-03 Issue:2 Volume:11 Page:330-337
ISSN:2075-1133
Container-title:Inorganic Materials: Applied Research
language:en
Short-container-title:Inorg. Mater. Appl. Res.

Author:

Lazarenko P. I.,Vorobyov Yu. V.,Fedyanina M. E.,Sherchenkov A. A.,Kozyukhin S. A.,Yakubov A. O.,Kukin A.V.,Sybina Yu. S.,Sagunova I. V.

Publisher

Pleiades Publishing Ltd

Subject

General Engineering,General Materials Science

Link

https://link.springer.com/content/pdf/10.1134/S2075113320020227.pdf

Reference32 articles.

1. Xu, Z., Chen, C., Wang, Z., Wu, K., Chong, H., and Ye, H., Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy, RSC Adv., 2018, vol. 8, pp. 21040–21046.

2. Boschker, J.E., Lu, X., Bragaglia, V., Wang, R., Grahn, H.T., and Calarco1, R., Electrical and optical properties of epitaxial binary and ternary GeTe–Sb2Te3 alloys, Sci. Rep., 2018, vol. 8, pp. 5889-1–5889-8.

3. Guo, S., Ding, X.J., Zhang, J.Z., Hu, Z.G., Ji, X.L., Wu, L.C., Song, Z.T., and Chu, J.H., Intrinsic emotions of dielectric function and electronic transition in tungsten doping Ge2Sb2Te5 phase change films discovered by ellipsometry at elevated temperatures, Appl. Phys. Lett., 2015, vol. 106, pp. 052105-1–052105-4.

4. Noe, P., Vallee, C., Hippert, F., Fillot, F., and Raty, J.-Y., Phase change materials for non-volatile memory devices: From technological challenges to materials science issues, Semicond. Sci. Technol., 2017, vol. 33, no. 1, pp. 013002-1–013002-54.

5. Sherchenkov, A.A., Kozyukhin, S.A., Lazarenko, P.I., Babich, A.V., Bogoslovskiy, N.A., Sagunova, I.V., and Redichev, E.N., Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors, Semiconductors, 2017, vol. 51, no. 2, pp. 146–152.

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