1. Frolov, I.A., Kozeikin, B.V., Churim, S.A., et al., Obzor po elektronnoi tekhnike: Tekhnologiya izgotovleniya submikronnykh sloev arsenida galliya. Ser.: Tekhnologiya, organizatsiya proizvodstva i oborudovanie (Review on Electronic Engineering: Manufacturing Technology of Submicron Gallium Arsenide Layers. Ser.: Technology, Organization of Production and Equipment), Moscow: Tsentr. Nauchno-Issled. Inst. “Elektronika,” 1976, no. 9 (397).
2. Perinskii, V.V., Perinskaya, I.V., and Kalganova, S.G., Nanorazmernye ionno-legirovannye struktury arsenida galliya dlya tverdotel’nykh SVCh ustroistv (Nanoscale Gallium Arsenide Ion-Alloy Structures for Solid-State Microwave), Saratov: Yuri Gagarin State Tech. Univ. Saratov, 2019.
3. Ziegler, I.E., SRIM – the stopping and range of ions in matter, Nucl. Instrum. Methods Phys. Res.,
Sect. B, 2010, vol. 268, pp. 1818–1823.
4. Raineri, V., Fallica, P.G., Percolla, G., Battaglia, A., Barbagallo, M., and Campisano, S.U., Gettering of metals by voids in silicon, J. Appl. Phys., 1995, vol. 78, no. 6, pp. 3727–3735. https://doi.org/10.1063/1.359953
5. Tonini, R., Corni, F., Frabboni, S., Ottaviani, G., and Cerofolini, C.F., High-dose helium-implanted single-crystal silicon: Annealing behavior, J. Appl. Phys., 1998, vol. 84, no. 9, pp. 4802–4808. https://doi.org/10.1063/1.368803