Author:
Andreev V. V.,Bondarenko G. G.,Stolyarov A. A.,Akhmelkin D. M.
Subject
General Engineering,General Materials Science
Reference18 articles.
1. Strong, A.W., Wu, E.Y., Vollertsen, R., Sune, J., Rosa, G.L., Rauch, S.E., and Sullivan, T.D., Reliability Wearout Mechanisms in Advanced CMOS Technologies, Wiley, 2009.
2. United States Military Standard MIL-STD-883H Method 1019.8.
3. Katerinich, I.I., Kurin, F.M., and Popov, V.D., Method of radiation-thermal treatment and improve reliability of MOS integrated circuits, Vopr. At. Nauki Tekh. Ser. Fiz. Radiats. Vozd. Radioelektron. Appar., 1996, nos. 3–4, pp. 127–132.
4. Voronkova, G.M., Popov, V.D., and Protopopov, G.A., A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment, Semiconductors, 2007, vol. 41, pp. 958–961.
5. Bondarenko, G.G., Andreev, V.V., Maslovsky, V.M., Stolyarov, A.A., and Drach, V.E., Plasma and injection modification of gate dielectric in MOS structures, Thin Solid Films, 2003, vol. 427, pp. 377–380.
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