Author:
Antonov A. V.,Nikiforov K. G.,Bondarenko G. G.
Subject
General Engineering,General Materials Science
Reference15 articles.
1. Zutic, I., Fabian, J, and Das Sarma, S., Spintronics: Fundamentals and Applications, Rev. Mod. Phys., 2004, vol. 76, pp. 323–410.
2. Schmidt, G., Concepts For Spin Injection Into Semiconductors—a Review, J. Phys. D: Appl. Phys., 2005, vol. 38, pp. R107–R122.
3. Borukhovich, A.S., Viglin, N.A., and Osipov, V.V., Spin-Polarized Transport as a Basis of New Generation of Structures of Microelectronics, Electronic Magazine “Investigated in Russia”, 2001, no. 4, http:/zhurnal.ape.relarn.ru/articles/2001/039.pdf .
4. Vedyaev, A.V., Use of the Spin-polarized Current in a Spintronic, Usp. Fiz. Nauk, 2002, vol. 172, no. 12, pp. 1458–1561.
5. Smits, C.J.P., Filip, A.T., Kohlhepp, J.T., et al., Magnetic and Structural Properties of EuS for Magnetic Tunnel Junction Barriers, Appl. Phys., 2004, vol. 95, pp. 7405–7409.