Special features of generation-recombination processes in the p-n junctions based on HgMnTe-Reference-Cited by-同舟云学术

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Special features of generation-recombination processes in the p-n junctions based on HgMnTe

Published:2000-06 Issue:6 Volume:34 Page:668-670
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kosyachenko L. A.,Ostapov S. É.,Sun Weiguo

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1188052.pdf

Reference9 articles.

1. A. Rogalski, Infrared Phys. 28, 139 (1988).

2. A. Rogalski and J. Rutkowski, Infrared Phys. 29, 887 (1989).

3. P. Brogowski, M. Mucha, and J. Piotrowski, Phys. Status Solidi 114, K37 (1989).

4. K. A. Kosyachenko, I. M. Rarenko, O. O. Bodnaruk, et al., Sci. Bull. Chernovtsy University, Physics 40, 59 (1998).

5. L. A. Kosyachenko, I. M. Rarenko, O. A. Bodnaruk, and Sun Weiguo, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1438 (1999) [Semiconductors 33, 1293 (1999)].

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared detector materials alternative to CdHgTe;Journal of Optical Technology;2007-03-01

2. Electronic transport properties of HgMnTe n+–p junctions;Infrared Physics & Technology;2003-02

3. Generation-recombination and diffusion currents in HgMnTe n +-p junctions;Semiconductors;2001-11

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