Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2-Reference-Cited by-同舟云学术

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Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2

Published:2019-04 Issue:8 Volume:109 Page:536-540
ISSN:0021-3640
Container-title:JETP Letters
language:en
Short-container-title:Jetp Lett.

Author:

Baskakov A. O.,Ogarkova Yu. L.,Lyubutin I. S.,Starchikov S. S.,Ksenofontov V.,Shylin S. I.,Kroitor’ D.,Tsurkan V.,Medvedev S. A.,Naumov P. G.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S0021364019080058.pdf

Reference21 articles.

1. M. V. Sadovskii, Phys. Usp. 51, 1201 (2008).

2. E. Z. Kuchinskii, I. A. Nekrasov, and M. V. Sadovskii, JETP Lett. 91, 518 (2010).

3. I. A. Nekrasov, N. S. Pavlov, and M. V. Sadovskii, JETP Lett. 105, 370 (2017).

4. H. Takahashi, A. Sugimoto, Y. Nambu, et al., Nat. Mater. 14, 1008 (2015).

5. V. Ksenofontov, G. Wortmann, A. I. Chumakov, T. Gasi, S. Medvedev, T. M. McQueen, R. J. Cava, and C. Felser, Phys. Rev. B 81, 184510 (2010).

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