Diffusion of As ions and self-diffusion in silicon during implantation-Reference-Cited by-同舟云学术

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Diffusion of As ions and self-diffusion in silicon during implantation

Published:2002-10 Issue:10 Volume:47 Page:1333-1336
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Demakov K. D.,Starostin V. A.,Shemardov S. G.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1514818.pdf

Reference12 articles.

1. V. M. Gusev, N. P. Busharov, S. M. Naftulin, and A. M. Pronichev, Prib. Tekh. Éksp., No. 4, 19 (1969).

2. V. A. Starostin, Fiz. Khim. Obrab. Mater., No. 5, 104 (1999).

3. P. A. Aleksandrov, E. K. Baranova, V. V. Beloshitsky, et al., Radiat. Eff. 88, 249 (1986).

4. K. D. Demakov, private communication.

5. V. A. Starostin, in Proceedings of the XV International Conference “Interaction of Ions with Surface,” Zvenigorod, 2001, Vol. 2, p. 201.

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1. A review of radiation enhanced diffusion in perspective materials;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01

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