DRBAC: Dynamic Row Buffer Access Control for Power and Performance of DRAM Systems-Reference-Cited by-同舟云学术

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DRBAC: Dynamic Row Buffer Access Control for Power and Performance of DRAM Systems

Published:2018-06-30 Issue:3 Volume:18 Page:307-314
ISSN:1598-1657
Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
language:en
Short-container-title:JSTS

Author:

Jeon Dong-Ik,Chung Ki-Seok

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scalability Prespective of Nanotube TFET Capacitorless DRAM in Sub-20 nm Regime;2024 IEEE Latin American Electron Devices Conference (LAEDC);2024-05-08

2. Investigation and Optimization of Double-gate MPI 1T DRAM with Gate-induced Drain Leakage Operation;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2019-04-30

3. A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency;IEEE Electron Device Letters;2019-04

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