Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations
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Published:2023-08-31
Issue:4
Volume:23
Page:228-235
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ISSN:2233-4866
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Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
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language:en
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Short-container-title:JSTS
Author:
Ko Min-Ki,Kim Jang-Hyun,Kim Garam
Publisher
The Institute of Electronics Engineers of Korea
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials