Surface Stoichiometry Dependence of Ambipolar SiGe Tunnel Field-effect Transistors and Its Effect on the Transient Performance Improvement
-
Published:2024-02-29
Issue:1
Volume:24
Page:1-7
-
ISSN:2233-4866
-
Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
-
language:en
-
Short-container-title:JSTS
Author:
Ryu Minjeong,Choi Woo-Young
Publisher
The Institute of Electronics Engineers of Korea