Drain-current Modeling of Sub-70-nm PMOSFETs Dependent on Hot-carrier Stress Bias Conditions
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Published:2017-02-28
Issue:1
Volume:17
Page:94-100
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ISSN:1598-1657
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Container-title:JSTS:Journal of Semiconductor Technology and Science
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language:en
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Short-container-title:JSTS:Journal of Semiconductor Technology and Science
Author:
Lim In Eui,Jhon Heesauk,Yoon Gyuhan,Choi Woo Young
Publisher
The Institute of Electronics Engineers of Korea
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials