Characterization of a CMOS 135-GHz Low Noise Amplifier with Two Different Noise Measurement Methods-Reference-Cited by-同舟云学术

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Characterization of a CMOS 135-GHz Low Noise Amplifier with Two Different Noise Measurement Methods

Published:2018-08-31 Issue:4 Volume:18 Page:536-540
ISSN:1598-1657
Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
language:en
Short-container-title:JSTS

Author:

Kim Doyoon,Kim Sooyeon,Song Kiryong,Kim Jungsoo,Yoo Junghwan,Rieh Jae-Sung

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Analysis of Novel Graphene Process Low-Noise Amplifier with Multi-stage Stagger-Tuned Approach over D-band;Journal of Infrared, Millimeter, and Terahertz Waves;2024-08-24

2. A 140-GHz FMCW Radar Transceiver With Dual-Lens Packaging for Improved Beam Alignment in 65-nm CMOS Technology;IEEE Transactions on Microwave Theory and Techniques;2024

3. A $D$-Band Wideband Low-Noise Amplifier Adopting Pseudo-Simultaneous Noise and Input Matched Dual-Peak $G_\text{max}$-Core;IEEE Transactions on Microwave Theory and Techniques;2023

4. A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched G max-Core;IEEE Transactions on Microwave Theory and Techniques;2021-05

5. THz Detectors and Related Topics;Introduction to Terahertz Electronics;2020-10-02

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