Decrease of Parasitic Capacitance for Improvement of RF Performance of Multi-finger MOSFETs in 90-nm CMOS Technology-Reference-Cited by-同舟云学术

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Decrease of Parasitic Capacitance for Improvement of RF Performance of Multi-finger MOSFETs in 90-nm CMOS Technology

Published:2015-04-30 Issue:2 Volume:15 Page:312-317
ISSN:1598-1657
Container-title:JSTS:Journal of Semiconductor Technology and Science
language:en
Short-container-title:JSTS:Journal of Semiconductor Technology and Science

Author:

Jang Seong-Yong,Kwon Sung-Kyu,Shin Jong-Kwan,Yu Jae-Nam,Oh Sun-Ho,Jeong Jin-Woong,Song Hyeong-Sub,Kim Choul-Young,Lee Ga-Won,Lee Hi-Deok

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/ieek/JAKO201514039404578.pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Circuit Level Layout Optimization of MOS Transistor for RF and Noise Performance Improvements;IEEE Transactions on Electron Devices;2016-12

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