p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Published:2016-10-30 Issue:5 Volume:16 Page:695-701
ISSN:1598-1657
Container-title:JSTS:Journal of Semiconductor Technology and Science
language:en
Short-container-title:JSTS:Journal of Semiconductor Technology and Science

Author:

Benyahia Djalal,Kubiszyn Lkasz,Michalczewski Krystian,Keblwski Artur,Martyniuk Piotr,Piotrowski Jozef,Rogalski Antoni

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/ieek/JAKO201631642279761.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Be doped GaSb with varying hole concentrations using single magnetic field Hall measurement and Raman spectroscopy;Journal of Physics and Chemistry of Solids;2022-04

2. The Dependence of InAs/InAsSb Superlattice Detectors’ Spectral Response on Molecular Beam Epitaxy Growth Temperature;Applied Sciences;2022-01-27

3. Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate;Infrared Physics & Technology;2018-05

4. Optical properties improvement of GaSb epilayers through defects compensation via doping;Journal of Luminescence;2018-05

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