32.1: Invited Paper: Amorphous Silicon Thin-Film Transistors with Planarized Gate Insulators-Reference-Cited by-同舟云学术

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32.1: Invited Paper: Amorphous Silicon Thin-Film Transistors with Planarized Gate Insulators

Published:1999 Issue:1 Volume:30 Page:728
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Jang Jin,Lim Byung Cheon

Publisher

Wiley

Reference9 articles.

1. Properties of hydrogenated amorphous silicon prepared by chemical vapor deposition

2. K. Fukuda and N. Ibaraki, 22ndConference on Sol. Stat. Dev. and Mat., (Sendai, 1990), 1027.

3. Effects of $\bf N_{2}O$-Plasma Treatment of $\bf a\mbox{-}SiO_{\ninmbi x}N_{\ninmbi y}$/$\bf a\mbox{-}SiN_{\ninmbi x}$ Gate Insulators on Electrical Stability of a-Si:H Thin-Film Transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low temperature μc-Si film growth using a CaF2 seed layer;Solar Energy Materials and Solar Cells;2002-01

2. New approaches to process simplification for large-area high-resolution TFT-LCDs;Journal of the Society for Information Display;2001-09

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