P-19: Effect of Back Channel Passivation on the Operation Stability of Solution-processed Transparent Oxide TFTs and Ring Oscillators
Author:
Publisher
Wiley
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.3621033/fullpdf
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3. High Performance Solution-Processed and Lithographically Patterned Zinc-Tin Oxide Thin-Film Transistors with Good Operational Stability;Park;Electrochem. Solid-State Lett.,2009
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications;Microelectronic Engineering;2015-04
2. Role of Adsorbed H$_{2}$O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors;Applied Physics Express;2012-01-19
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