P-202L: Late-News Poster: Density-of-States Based Analysis on the Effect of Active Thin-film Thickness on Current Stress-induced Instability in Amorphous InGaZnO AMOLED Driver TFTs-Reference-Cited by-同舟云学术

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P-202L: Late-News Poster: Density-of-States Based Analysis on the Effect of Active Thin-film Thickness on Current Stress-induced Instability in Amorphous InGaZnO AMOLED Driver TFTs

Published:2011-06 Issue:1 Volume:42 Page:1223-1226
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Kong Dongsik,Jung Hyungkwang,Kim Yongsik,Bae Minkyung,Jeon Yong Woo,Kim Sungchul,Jang Jaemam,Kim Jaehyeong,Kim Woojoon,Hur Inseok,Kim Dong Myong,Kim Dae Hwan,Ahn Byung,Park Sei Yong,Park Jun-Hyun,Kim Joo Han,Park Jaewoo,Lee Je-Hun

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.3621052/fullpdf

Reference15 articles.

1. Time and temperature dependence of instability mechanisms in amorphous silicon thin‐film transistors

2. Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress

3. J. Y. Kwon et al Proc. IDW '07 1783 2007

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2018-08

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