High Resolution AMLCD made with a-Si:H TFTs and with an Al-Gate and IZO Last Structure-Reference-Cited by-同舟云学术

High Resolution AMLCD made with a-Si:H TFTs and with an Al-Gate and IZO Last Structure

Published:1999 Issue:1 Volume:30 Page:736
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Kinoshita H.,Scheleupen K.,Colgan E. G.,Nunes R.,Kitahara H.,Kodate M.,Tagsugi S.

Publisher

Wiley

Reference8 articles.

1. C. W. Kim, J. H. Lee, H. R. Nam, S. Y. Kim, C. O. Jeong, J. H. Choi, M. P. Hong, H. S. Byun, H. G. Yang, and J. H. Souk, “Low Cost, High Display Quality TFT-LCD Process”,Euro. Display '96 Digest, Birmingham, England, (1996) pp. 591–594.

2. K. Schleupen, P. Alt, P. Andry, S. Asaad, E. Colgan, P. Fryer, E. Galligan, W. Graham, P. Greier, R. Horton, H. Ifill, R. John, R. Kaufman, H. Kinoshita, H. Kitahara, M. Kodate, A. Lanzetta, K. Latzko, S. Libertini, F. Libsch, A. Lien, M. Mastro, S. Millman, R. Nunes, R. Nywening, R. Polastre, J. Ritsko, M. Rothwell, S. Takasugi, K. Warren, J. Wilson, R. Wisnieff, S. Wright, C. Yue, “High Information Content Color 16.3ʺ Desktop AMLCD with 15.7 Million a-Si:H TFTs”,Asia Display '98 Digest, Seoul, Korea, (1998) pp. 187–191.

3. Effects of Nd content in Al thin films on hillock formation

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