49.4: High-definition Top-emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors-Reference-Cited by-同舟云学术

49.4: High-definition Top-emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors

Published:2011-06 Issue:1 Volume:42 Page:722-725
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Sugisawa Nozomu,Sasaki Toshiki,Ushikubo Takahiro,Ohsawa Nobuharu,Seo Satoshi,Hatano Kaoru,Nagata Tkaaki,Fukai Shuji,Murakawa Tsutomu,Yoshitomi Shuhei,Hayakawa Masahiko,Miyake Hiroyuki,Koyama Jun,Yamazaki Shunpei,Okazaki Kenichi,Sakakura Masayuki

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.3621427/fullpdf

Reference24 articles.

1. 18.3: Low Power 3.4-inch Quarter High Definition OLED Display Using In-Ga-Zn-Oxide TFTs and White Tandem OLED

2. L. Hyoung et al

3. P-185: Low-Drive-Voltage OLEDs with a Buffer Layer Having Molybdenum Oxide

4. 60.2: Intermediate Connector with Suppressed Voltage Loss for White Tandem OLEDs

5. P-148: High-Efficient Green OLED over 150 Im/W with New P-doped Layer Exhibiting No Optical Loss Derived from Charge Transfer Complex

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