A Low Temperature Poly-Si TFT with a SMC Poly-Si Crystallized at 420 °C
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Publisher
Wiley
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1. The characteristics of solid phase crystallized (SPC) polycrystalline silicon thin film transistors employing amorphous silicon process;Journal of Non-Crystalline Solids;2008-05
2. Effect of Oxygen-Plasma Treatment on Formation of LTPS on SOG by Metal-Mediated Crystallization;Electrochemical and Solid-State Letters;2007
3. Effect of a Channel Length and Drain Bias on the Threshold Voltage of Field Enhanced Solid Phase Crystallization Polycrystalline Thin Film Transistor on the Glass Substrate;MRS Proceedings;2007
4. 36.3: High Quality Poly‐Si Crystallized at 400 °C by Field Enhanced SMC;SID Symposium Digest of Technical Papers;2000-05
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