60.4: Single Layer Al-Ni Interconnections for TFT-LCDs using Direct Contacts with ITO and a-Si
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Publisher
Wiley
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.2785656/fullpdf
Reference10 articles.
1. Nanometer-Scale Investigation of Al-Based Alloy Films for Thin-Film Transistor Liquid Crystal Display Arrays
2. Effects of Nd content in Al thin films on hillock formation
3. Low resistivity Al–RE (RE=La, Pr, and Nd) alloy thin films with high thermal stability for thin-film-transistor interconnects
4. Evaluation of Al(Nd)-alloy films for application to thin-film-transistor liquid crystal displays
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1. Formation process and adjustment of the profile angle of Al–Mo composite electrodes in thin-film transistors for large-size premium displays;SCIENTIA SINICA Chimica;2023-09-04
2. Effects of a Ni alloying element on Al–Ni metallization;Semiconductor Science and Technology;2011-12-22
3. Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers;Japanese Journal of Applied Physics;2010-11-22
4. Current Path Analysis of the Direct Contact Between ITO and Al–Ni Alloy Films;Journal of The Electrochemical Society;2009
5. Characterization of interface of Al–Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry;Micron;2009-01
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