Improved photoluminescent properties of ZnS:Mn due to the δ-doping process-Reference-Cited by-同舟云学术

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Improved photoluminescent properties of ZnS:Mn due to the δ-doping process

Published:1998 Issue:1 Volume:6 Page:67
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:J. Soc. Inf. Display

Author:

Schön S.,Chaichimansour M.,Park W.,Thomas E. W.,Yang T.,Wagner B. K.,Summers C. J.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Future requirements of display phosphors from an historical perspective

2. Influence of the Deposition Temperature on the Photoluminescence from Thin Film ZnS : Mn

3. Luminescence concentration quenching due to energy migration in ZnS:Mn with fixed trap density

4. Organized and semiorganized doping for ZnS:Mn electroluminescent devices

5. High-quality ZnS thin-film growth for flat-panel displays

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vapor deposited Cr-doped ZnS thin films: towards optically pumped mid-infrared waveguide lasers;Optical Materials Express;2016-08-23

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