Dispersive transport and electronic structure of amorphous silicon alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.24.4855/fulltext
Reference8 articles.
1. Theory of amorphous semiconductors
2. Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous Silicon
3. Simple Model for Density of States and Mobility of an Electron in a Gas of Hard-Core Scatterers
4. Monte Carlo simulation of anomalous transit-time dispersion of amorphous solids
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tunneling recombination and the photoconductivity of amorphous silicon in the temperature region around 100 K;Physical Review B;1993-07-15
2. Review of the Simulation of Transient Experiments on Amorphous Silicon Hydride;MRS Proceedings;1992
3. Review of transport experiments;Springer Tracts in Modern Physics;1989
4. Electron Transport in Oxygenated Amorphous Hydrogenated Silicon Prepared by Reactive Sputtering;Japanese Journal of Applied Physics;1987-04-20
5. Calculation of the extended-state electron mobility in hydrogenated amorphous silicon;Solid State Communications;1985-04
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