Metal-insulator transition in the compensated semiconductor Si:(P,B)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.13356/fulltext
Reference25 articles.
1. Critical behavior of the zero-temperature conductivity in compensated silicon, Si:(P,B)
2. Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions
3. Metal-insulator transition in a doped semiconductor
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