Theory of fine-structure splittings for donor-bound excitons in indirect materials
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.25.3945/fulltext
Reference42 articles.
1. Experimental Proof of the Existence of a New Electronic Complex in Silicon
2. New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium
3. Evidence for Bound Multiple-Exciton Complexes in Silicon
4. New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in Si
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