Photoluminescence study of localization effects induced by the fluctuating random alloy potential in indirect band-gapGaAs1−xPx
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.8220/fulltext
Reference12 articles.
1. Disorder effects on free excitons in CdS1−xSex mixed crystals
2. Direct Evidence for Random-Alloy Splitting of Cu Levels inGaAs1−xPx
3. Resonant excitation of bound exciton luminescence in GaAs1−xPx alloys
4. Localized Excitons in CdS1−xSex Solid Solutions
5. Luminescence of excitons bound by disorder-potential fluctuations in CdS1−xSex: Spatial diffusion, excitation level dependence, and kinetics
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