Nuclear-magnetic-resonance studies of strain in isovalently doped GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.12512/fulltext
Reference17 articles.
1. Effect of doping on formation of dislocation structure in semiconductor crystals
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5. Te and Cd nuclear-magnetic-resonance study of local structure and bonding inCd1−xZnxTe
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1. Strain and origin of inhomogeneous broadening probed by optically detected nuclear magnetic resonance in a (110) GaAs quantum well;Physical Review B;2014-03-11
2. Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well;Japanese Journal of Applied Physics;2011-04-20
3. Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well;Japanese Journal of Applied Physics;2011-04-01
4. Solid-State NMR of Inorganic Semiconductors;Topics in Current Chemistry;2011
5. Spins as probes of different electronic states;Concepts in Magnetic Resonance Part A;2007
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