Oscillator strengths for optical band-to-band processes in GaN epilayers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.7678/fulltext
Reference22 articles.
1. Emerging gallium nitride based devices
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
4. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
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