Optically induced charge storage and current generation in InAs quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.073304/fulltext
Reference19 articles.
1. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
2. Ultranarrow Luminescence Lines from Single Quantum Dots
3. Band filling at low optical power density in semiconductor dots
4. Charged Excitons in Self-Assembled Semiconductor Quantum Dots
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1. Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots;Japanese Journal of Applied Physics;2015-02-20
2. Growth, Optical, and Transport Properties of Self-Assembled InAs/InP Nanostructures;Nanoscale Photonics and Optoelectronics;2010
3. Electrostatic Force and Force Gradient Microscopy: Principles, Points of Interest and Application to Characterisation of Semiconductor Materials and Devices;Applied Scanning Probe Methods II;2006
4. Ab initioinvestigation of noncontact atomic force microscopy tip-surface instability in InAs(110) surface;Physical Review B;2005-07-08
5. Self-organized growth of InAs quantum wires and dots on InP(001): The role of vicinal substrates;Applied Physics Letters;2005-03-14
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