Doped NiO: The mottness of a charge transfer insulator-Reference-Cited by-同舟云学术

Doped NiO: The mottness of a charge transfer insulator

Published:2020-05-15 Issue:19 Volume:101 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wrobel Friederike^ORCID,Park Hyowon,Sohn Changhee,Hsiao Haw-Wen,Zuo Jian-Min,Shin Hyeondeok,Lee Ho Nyung^ORCID,Ganesh P.,Benali Anouar,Kent Paul R. C.^ORCID,Heinonen Olle^ORCID,Bhattacharya Anand

Funder

National Research Foundation of Korea

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Division of Materials Sciences and Engineering

Argonne National Laboratory

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.195128/fulltext

Reference47 articles.

1. Magnetic Effects and the Hartree-Fock Equation

2. Spin Density Waves in an Electron Gas

3. Semi-conductors with partially and with completely filled3d-lattice bands

4. Discussion of the paper by de Boer and Verwey

5. Doping a Mott insulator: Physics of high-temperature superconductivity

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unveiling the electronic origin of lanthanide based Metal Organic Framework with ideal spin filtering capacity;Communications Physics;2024-05-17

2. β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances;Electronics;2024-03-27

3. Tuning of exchange constants and magnetic anisotropy for terahertz antiferromagnetic resonance frequencies in cation-doped NiO;Physical Review Applied;2024-03-20

4. Role of Coulomb interactions on the electronic properties of monolayer NiX2 ( X=S,Se ): A DFT+U+V study;Physical Review B;2023-12-12

5. Niobium-doped NiO as p-type nanostructured layer for transparent photovoltaics;Thin Solid Films;2023-08