Photoionization of semiconductor impurities in the presence of a static electric field
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.13452/fulltext
Reference18 articles.
1. Deep-level optical spectroscopy in GaAs
2. Electric field and impurity concentration effects on the ionization energy of impurities. Application to acceptors in ZnTe
3. Optical transitions via the deep O donor in GaP. I. Phonon interaction in low-temperature spectra
4. Photoionization of impurity atoms in semiconductors in the presence of an applied electric field
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